SVF8N60F 查看數據表（PDF） - Silan Microelectronics
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SVF8N60F Datasheet PDF : 8 Pages
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SVF8N60T/F_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Continuous Source Current
Pulsed Source Current
IS
Integral Reverse P-N
Junction Diode in the
ISM
MOSFET
Diode Forward Voltage
VSD IS=8.0A,VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
Trr
IS=8.0A,VGS=0V,
Qrr
dIF/dt=100A/µS
Notes:
1. L=30mH, IAS=5.0A, VDD=110V, RG=25Ω, starting TJ=25°C;
2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
3. Essentially independent of operating temperature.
Min.
--
--
--
--
--
Typ.
--
--
--
520.65
3.72
Max. Unit
8.0
A
32.0
1.4
V
--
ns
--
µC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.3
2012.06.15
Page 3 of 8
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