MT46V16M16BG-75ZL 查看數據表（PDF） - Micron Technology
零件编号
产品描述 (功能)
生产厂家
MT46V16M16BG-75ZL Datasheet PDF : 80 Pages
| |||
CK#
CK
COMMAND
T0
WRITE
256Mb: x4, x8, x16
DDR SDRAM
Figure 24: Random WRITE Cycles
T1 T1n T2 T2n T3 T3n T4 T4n T5 T5n
WRITE
WRITE
WRITE
WRITE
NOP
ADDRESS
DQS
DQ
DM
Bank,
Col b
Bank,
Col x
tDQSS (NOM)
Bank,
Col n
Bank,
Col a
Bank,
Col g
DI
DI
DI
DI
DI
DI
DI
DI
DI
DI
b
b'
x
x'
n
n'
a
a'
g
g'
DON’T CARE
TRANSITIONING DATA
NOTE:
1. DI b, etc., = data-in for column b, etc.
2. b', etc., = the next data-in following DI b, etc., according to the programmed burst order.
3. Programmed burst length = 2, 4, or 8 in cases shown.
4. Each WRITE command may be to any bank.
09005aef8076894f
256MBDDRx4x8x16_2.fm - Rev. F 6/03 EN
33
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
Share Link: 