MT46V16M16BG-75ZL 查看數據表（PDF） - Micron Technology
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MT46V16M16BG-75ZL Datasheet PDF : 80 Pages
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CK#
CK
COMMAND
256Mb: x4, x8, x16
DDR SDRAM
Figure 22: Consecutive WRITE to WRITE
T0
T1 T1n T2 T2n T3 T3n T4 T4n T5
WRITE
NOP
WRITE
NOP
NOP
NOP
ADDRESS
tDQSS (NOM)
DQS
DQ
DM
Bank,
Col b
tDQSS
DI
b
Bank,
Col n
DI
n
DON’T CARE
TRANSITIONING DATA
NOTE:
1. DI b, etc., = data-in for column b, etc.
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. Three subsequent elements of data-in are applied in the programmed order following DI n.
4. An uninterrupted burst of 4 is shown.
5. Each WRITE command may be to any bank.
09005aef8076894f
256MBDDRx4x8x16_2.fm - Rev. F 6/03 EN
31
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
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