STPS10170CT 查看數據表（PDF） - STMicroelectronics

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STPS10170CT

High voltage power Schottky rectifier

STMicroelectronics 

Characteristics

1

Characteristics

STPS10170C

Table 1.

Symbol

Absolute ratings (limiting values per diode, Tamb = 25° C unless otherwise specified)

Parameter

Value

Unit

VRRM Repetitive peak reverse voltage

IF(RMS) RMS forward current

IF(AV) Average forward current, δ = 0.5

Tc = 155° C

Per diode

Total package

IFSM

PARM

Tstg

Tj

dV/dt

Surge non repetitive forward current

tp = 10 ms Sinusoidal

Relative peak avalanche power

Tj = 25° C

tp = 1µs

Storage temperature range

Maximum operating junction temperature(1)

Critical rate of rise of reverse voltage

1. d----P-----t--o----t < ------------1------------- thermal runaway condition for a diode on its own heatsink

dTj Rth(j – a)

Table 2. Thermal parameters

170

10

5

10

75

3100

-65 to + 175

175

10 000

V

A

A

A

W

°C

°C

V/µs

Symbol

Parameter

Value

Unit

Rth(j-c)

Rth(c)

Junction to case

Coupling

Per diode

Total

4

2.4

°C/W

0.7

Table 3. Static electrical characteristics

Symbol

Parameter

Test conditions

Min. Typ Max. Unit

IR(1) Reverse leakage current

VF(2) Forward voltage drop

Tj = 25° C

Tj = 125° C

Tj = 25° C

Tj = 125° C

Tj = 25° C

Tj = 125° C

VR = VRRM

IF = 5 A

IF = 10 A

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: tp = 380 µs, δ < 2 %

To evaluate the conduction losses use the following equation:

P = 0.65 x IF(AV) + 0.02 x IF2(RMS)

10 µA

10 mA

0.92

0.69 0.75

V

1

0.79 0.85

2/10

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