2SC5339 查看數據表（PDF） - Quanzhou Jinmei Electronic
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2SC5339 Datasheet PDF : 3 Pages
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SC5339
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VEBO
Emitter-base breakdown voltage
VCEsat Collector-emitter saturation voltage
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
Cob
Collector output capacitance
VF
Forward voltage(damper diode)
fT
Transition frequency
Switching times
ts
Storage time
tf
Fall time
CONDITIONS
IE=400mA ;IC=0
IC=5A; IB=1.25A
IC=5A; IB=1.25A
VCB=1500V; IE=0
VEB=5V; IC=0
IC=1A ; VCE=5V
IC=5A ; VCE=5V
IE=0 ; VCB=10V,f=1MHz
IF=5A
IE=0.1A ; VCE=10V
ICP=5A;IB1(end) =1.1A
fH=31.5kHz
MIN TYP. MAX UNIT
5
V
5
V
1.3
V
1
mA
71
250
mA
10
30
4
8
82
pF
1.35
1.8
V
2.4
MHz
4
6
μs
0.2
0.5
μs
JMnic
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