2N5871 查看數據表（PDF） - Inchange Semiconductor

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2N5871

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2N5871 2N5872

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

2N5871

-60

VCEO(SUS)

Collector-emitter

sustaining voltage

IC=-0.1A ;IB=0

V

2N5872

-80

VCEsat Collector-emitter saturation voltage

IC=-5A;IB=-0.5A

-1.0

V

VBEsat Base-emitter saturation voltage

IC=-5A; IB=-0.5A

-1.5

V

ICBO

Collector cut-off current

VCB=ratedVCBO; IB=0

-1.0 mA

2N5871 VCE=-30V; IB=0

ICEO

Collector cut-off current

-2.0 mA

2N5872 VCE=-40V; IB=0

体 IEBO

Emitter cut-off current

固I电NC半H导ANGE SEMICONDUCTOR hFE

DC current gain

fT

Trainsistion frequency

VEB=-5V; IC=0

IC=-2.5A ; VCE=-4V

20

IC=-0.5A ; VCE=-10V

4

-1.0 mA

100

MHz

2

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