2N5871 查看數據表（PDF） - Inchange Semiconductor
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2N5871 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N5871 2N5872
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
APPLICATIONS
·For medium-speed switching and
amplifier applications
PINNING
PIN
1
DESCRIPTION
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
导体 SYMBOL
PARAMETER
CONDITIONS
固I电NC半HANGE SEMICONDUCTOR VCBO
Collector-base voltage
2N5871
2N5872
Open emitter
VCEO
Collector-emitter voltage
2N5871
2N5872
Open base
VEBO
Emitter-base voltage
Open collector
VALUE
-60
-80
-60
-80
-5
UNIT
V
V
V
IC
Collector current
-7
A
PD
Total Power Dissipation
TC=25℃
115
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
1.17
UNIT
℃/W
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