FQB8N60CF 查看數據表（PDF） - Fairchild Semiconductor
零件编号
产品描述 (功能)
生产厂家
FQB8N60CF Datasheet PDF : 8 Pages
| |||
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
* Notes :
1. V = 0 V
GS
2. I = 250 킕
D
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 9. Maximum Safe Operating Area
102
Operation in This Area
is Limited by R
DS(on)
10 µs
101
100 µs
1ms
10ms
DC 100ms
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
* Notes :
1. V = 10 V
GS
2. I = 3.13 A
D
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 10. Maximum Drain Current
vs. Case Temperature
8
6
4
10-1
* Notes :
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
10-2
100
101
102
103
V , Drain-SourceVoltage[V]
DS
Figure 11. Transient Thermal Response Curve
2
0
25
50
75
100
125
150
TC, Case Temperature [℃]
100
D = 0.5
0 .2
1 0 -1
0 .1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
1 0 -5
※ N otes :
1. Zθ JC(t) = 0.85 ℃ /W M ax.
2. D uty F actor, D = t1/t2
3. T JM - TC = P DM * Z θ JC(t)
sin g le p u ls e
PDM
t1
t2
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S qu are W ave P u lse D ura tion [sec]
4
www.fairchildsemi.com
FQB8N60CF Rev. A
Share Link: 