2SC3559 查看數據表（PDF） - Inchange Semiconductor

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2SC3559

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0

V(BR)CBO Collector-base breakdown voltage

IC=1mA , IE=0

VCEsat Collector-emitter saturation voltage IC=0.8A; IB=0.16A

VBEsat Base-emitter saturation voltage

IC=0.8A; IB=0.16A

ICBO

Collector cut-off current

VCB=800V; IE=0

IEBO

Emitter cut-off current

VEB=7V; IC=0

hFE

DC current gain

IC=0.8A ; VCE=5V

Switching times

tr

Rise time

ts

Storage time

tf

Fall time

IB1=0.08A; IB2=-0.2A

VCC≈400V; RL=500Ω

Product Specification

2SC3559

MIN TYP. MAX UNIT

800

V

900

V

0.6

V

1.2

V

0.1

mA

1.0

mA

10

1.0

μs

4.0

μs

1.0

μs

2

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