FQA9N90C 查看數據表（PDF） - Fairchild Semiconductor

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FQA9N90C

900V N-Channel MOSFET

Fairchild Semiconductor 

FQA9N90C

900V N-Channel MOSFET

Features

• 9A, 900V, RDS(on) = 1.4Ω @VGS = 10 V

• Low gate charge ( typical 45 nC)

• Low Crss ( typical 14pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

September 2006

QFET ®

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies, active power factor

correction, electronic lamp ballast based on half bridge

topology.

D

G DS

TO-3P

FQA Series

G

S

Absolute Maximum Ratings

Symbol

VDSS

ID

IDM

VGSS

EAS

IAR

EAR

dv/dt

PD

TJ, TSTG

TL

Parameter

Drain-Source Voltage

Drain Current

Drain Current

- Continuous (TC = 25°C)

- Continuous (TC = 100°C)

- Pulsed

(Note 1)

Gate-Source Voltage

Single Pulsed Avalanche Energy

(Note 2)

Avalanche Current

(Note 1)

Repetitive Avalanche Energy

(Note 1)

Peak Diode Recovery dv/dt

(Note 3)

Power Dissipation (TC = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

FQA9N90C

900

9.0

5.7

36

± 30

900

9.0

28

4.0

280

2.22

-55 to +150

300

Thermal Characteristics

Symbol

RθJC

RθCS

RθJA

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

Thermal Resistance, Junction-to-Ambient

Typ

--

0.24

--

Max

0.45

--

40

Units

V

A

A

A

V

mJ

A

mJ

V/ns

W

W/°C

°C

°C

Units

°C/W

°C/W

°C/W

©2006 Fairchild Semiconductor Corporation

1

FQA9N90C Rev. A1

www.fairchildsemi.com

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