2SC2979 查看數據表（PDF） - Inchange Semiconductor
零件编号
产品描述 (功能)
生产厂家
2SC2979 Datasheet PDF : 4 Pages
| |||
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2979
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; RBE=∞,L=100mH
800
V
V(BR)EBO Base-emitter breakdown voltage
IE=10mA ; IC=0
7
V
VCEsat Collector-emitter saturation voltage IC=0.75A; IB=0.15A
1.0
V
VBEsat Base-emitter saturation voltage
IC=0.75A; IB=0.15A
1.5
V
ICBO
Collector cut-off current
VCB=750V ;IE=0
100 μA
ICEO
Collector cut-off current
VCE=650V; RBE=∞
100 μA
hFE-1
DC current gain
IC=0.3A ; VCE=5V
15
hFE-2
DC current gain
固IN电C半H导AN体GE SEMICONDUCTOR Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=1.5A ; VCE=5V
VCC≈250V; IC=1.5A
IB1=0.3A;IB2=-0.75A
7
1.0
3.0
1.0
μs
μs
μs
2
Share Link: 