HAF2012 查看數據表（PDF） - Hitachi -> Renesas Electronics

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HAF2012

Silicon N Channel MOS FET Series Power Switching

Hitachi -> Renesas Electronics 

HAF2012(L), HAF2012(S)

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Drain to source voltage

Gate to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Channel dissipation

VDSS

VGSS

VGSS

ID

I Note1

D(pulse)

I DR

Pch Note2

Channel temperature

Tch

Storage temperature

Tstg

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Ta = 25°C

Ratings

Unit

60

V

16

V

–2.8

V

20

A

40

A

20

A

50

W

150

°C

–55 to +150

°C

Typical Operation Characteristics

Item

Input voltage

Input current

(Gate non shut down)

Input current

(Gate shut down)

Shut down temperature

Gate operation voltage

Symbol

VIH

VIL

I IH1

I IH2

I IL

I IH(sd)1

I IH(sd)2

Tsd

VOP

Min

3.5

—

—

—

—

—

—

—

3.5

Typ

—

—

—

—

—

0.8

0.35

175

—

Max

—

1.2

100

50

1

—

—

—

13

Unit

V

V

µA

µA

µA

mA

mA

°C

V

Test Conditions

Vi = 8V, VDS = 0

Vi = 3.5V, VDS = 0

Vi = 1.2V, VDS = 0

Vi = 8V, VDS = 0

Vi = 3.5V, VDS = 0

Channel temperature

2

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