Q67040-A4206-A2 查看數據表（PDF） - Siemens AG
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Q67040-A4206-A2 Datasheet PDF : 8 Pages
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BUP 314
Power dissipation
Ptot = ƒ(TC)
parameter: Tj ≤ 150 °C
320
W
Ptot
240
200
160
120
80
40
0
0 20 40 60 80 100 120 °C 160
TC
Collector current
IC = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C
55
A
IC
45
40
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 °C 160
TC
Safe operating area
IC = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
10 3
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
IGBT
10 0
A
IC 10 2
10 1
10 0
tp = 2.0µs
10 µs
100 µs
1 ms
10 ms
10 -1
10 0
10 1
DC
10 2
10 3
V
VCE
K/W
ZthJC
10 -1
10 -2
single pulse
10 -3
10 -5
10 -4
10 -3
10 -2
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -1
tp
s 10 0
Semiconductor Group
4
Jul-30-1996
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