ISL9V5045S3ST 查看數據表（PDF） - Fairchild Semiconductor
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ISL9V5045S3ST Datasheet PDF : 9 Pages
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Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
BVCER
BVECS
ESCIS25
ESCIS150
IC25
IC110
VGEM
PD
TJ
TSTG
TL
Tpkg
ESD
Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)
At Starting TJ = 25°C, ISCIS = 39.2A, L = 650 µHy
At Starting TJ = 150°C, ISCIS = 31.1A, L = 650 µHy
Collector Current Continuous, At TC = 25°C, See Fig 9
Collector Current Continuous, At TC = 110°C, See Fig 9
Gate to Emitter Voltage Continuous
Power Dissipation Total TC = 25°C
Power Dissipation Derating TC > 25°C
Operating Junction Temperature Range
Storage Junction Temperature Range
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500Ω
Ratings
480
24
500
315
51
43
±10
300
2
-40 to 175
-40 to 175
300
260
4
Units
V
V
mJ
mJ
A
A
V
W
W/°C
°C
°C
°C
°C
kV
Package Marking and Ordering Information
Device Marking
V5045S
V5045S
V5045S
Device
ISL9V5045S3ST
ISL9V5045S3
ISL9V5045S3S
Package
TO-263AB
TO-262AA
TO-263AB
Reel Size
330mm
Tube
Tube
Tape Width
24mm
N/A
N/A
Quantity
800
50
50
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off State Characteristics
BVCER
BVCES
BVECS
BVGES
ICER
IECS
R1
R2
Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0,
420
RG = 1KΩ, See Fig. 15
TJ = -40 to 150°C
Collector to Emitter Breakdown Voltage IC = 10mA, VGE = 0,
445
RG = 0, See Fig. 15
TJ = -40 to 150°C
Emitter to Collector Breakdown Voltage IC = -75mA, VGE = 0V,
30
TC = 25°C
Gate to Emitter Breakdown Voltage
IGES = ± 2mA
±12
Collector to Emitter Leakage Current VCER = 320V, TC = 25°C
-
RG = 1KΩ, See TC = 150°C -
Fig. 11
Emitter to Collector Leakage Current VEC = 24V, See TC = 25°C
-
Fig. 11
TC = 150°C -
Series Gate Resistance
-
Gate to Emitter Resistance
10K
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage IC = 10A,
TC = 25°C,
-
VGE = 4.0V See Fig. 4
VCE(SAT) Collector to Emitter Saturation Voltage IC = 15A,
TC = 150°C
-
VGE = 4.5V
Typ Max Units
450 480
V
475 505
V
-
-
V
±14
-
V
-
25
µA
-
1
mA
-
1
mA
-
40
mA
100
-
Ω
-
30K
Ω
1.25 1.60
V
1.47 1.80
V
2
ISL9V5045S3S / ISL9V5045S3 Rev. A
www.fairchildsemi.com
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