2SC1472 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SC1472

Silicon NPN Epitaxial, Darlington

Hitachi -> Renesas Electronics 

2SC1472 (K)

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to emitter breakdown V(BR)CEO 30

—

voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

I CBO

I EBO

hFE1*1

hFE2*1

—

—

—

—

2000 —

3000 —

hFE3*1

3000 —

Collector to emitter saturation VCE(sat)

—

—

voltage

Base to emitter voltage

VBE(sat)

—

—

Gain bandwidth product

fT

50

—

Collector output capacitance Cob

—

—

Turn on time

t on

—

60

Max Unit

—

V

100 nA

100 nA

100000

—

—

1.5 V

2.0 V

—

MHz

10

pF

—

ns

Turn off time

t off

—

800 —

ns

Storage time

t stg

—

350 —

ns

Note: 1. The 2SC1472(K) is grouped by hFE as follows.

A

B

hFE1

2000 to 100000 5000 to 100000

hFE2

3000 min

10000 min

hFE3

3000 min

10000 min

Test conditions

IC = 1 mA, RBE = ∞

VCB = 30 V, IE = 0

VEB = 10 V, IC = 0

IC = 10 mA, VCE = 5 V

IC = 100 mA, VCE = 5 V

(Pulse Test)

IC = 400 mA, VCE = 5 V

(Pulse Test)

IC = 100 mA, IB = 0.1 mA

IC = 100 mA, IB = 0.1 mA

VCE = 5 V, IC = 10 mA

VCB = 10 V, IE = 0, f = 1 MHz

VCC = 11 V

IC = 100 IB1 = 100 mA

IB2 = –IB1

Switching Time Test Circuit

P.G.

tr, tf ≤ 15 ns

PW ≥ 10 µs

duty ratio ≤ 10%

D.U.T.

6k

6k

50 0.002 0.002

CRT

100

–+

–6 V 50

–+

50 11 V

Unit R : Ω

C : µF

Response Waveform

13 V

Input

0

Output

0

10%

90%

10%

td

ton

90%

90%

10%

tstg

toff

3

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