NTMFS4927NT1G(2012) 查看數據表（PDF） - ON Semiconductor
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NTMFS4927NT1G Datasheet PDF : 7 Pages
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NTMFS4927N, NTMFS4927NC
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
6.5
21.0
ns
18.0
3.0
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
VSD
tRR
ta
tb
QRR
VGS = 0 V,
IS = 30 A
TJ = 25°C
TJ = 125°C
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
0.87 1.1
V
0.76
21.4
10.5
ns
10.9
8.4
nC
Source Inductance
LS
Drain Inductance
Gate Inductance
LD
LG
TA = 25°C
Gate Resistance
RG
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
1.00
nH
0.005
nH
1.84
nH
0.90 2.2
W
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