NLX1G11AMX1TCG 查看數據表（PDF） - ON Semiconductor
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NLX1G11AMX1TCG Datasheet PDF : 8 Pages
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NLX1G11
DC ELECTRICAL CHARACTERISTICS
Symbol
VIH
Parameter
Low−Level
Input
Voltage
Conditions
VCC
TA = 25 5C
(V)
Min
Typ
Max
1.65
0.75 x VCC
2.3 to 5.5 0.70 x VCC
TA = −555C to +1255C
Min
Max
0.75 x VCC
0.70 x VCC
Unit
V
VIL
Low−Level
Input
Voltage
1.65
2.3 − 5.5
0.25 x VCC
0.30 x VCC
0.25 x VCC
V
0.30 x VCC
VOH
High−
Level
Output
Voltage
VIN = VIH or VIL
IOH = −100 mA
VIN = VIH or VIL
IOH = −4 mA
IOH = −8 mA
IOH = −12 mA
IOH = −16 mA
IOH = −24 mA
IOH = −32 mA
1.65 − 5.5
1.65
2.3
2.7
3.0
3.0
4.5
VCC−0.1
1.29
1.9
2.2
2.4
2.3
3.8
VCC
1.52
2.15
2.4
2.8
2.68
4.2
VOL
Low−Level VIN = VIH or VIL 1.65 − 5.5
Output
IOL = 100 mA
Voltage
VIN = VIH or VIL
IOH = 4 mA
1.65
IOH = 8 mA
2.3
IOH = 12 mA
2.7
IOH = 16 mA
3.0
IOH = 24 mA
3.0
IOH = 32 mA
4.5
0.08
0.1
0.12
0.15
0.22
0.22
IIN
Input
0 v VIN v 5.5V
0 to 5.5
Leakage
Current
0.1
0.24
0.3
0.4
0.4
0.55
0.55
±0.1
VCC−0.1
1.29
1.9
2.2
2.4
2.3
3.8
V
0.1
V
0.24
0.3
0.4
0.4
0.55
0.55
±1.0
mA
IOFF
Power−Off VIN or VOUT =
0
Output
5.5 V
Leakage
Current
1.0
10
mA
ICC
Quiescent 0 v VIN v VCC
5.5
Supply
Current
1.0
10
mA
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