SI1499DH 查看數據表（PDF） - Vishay Semiconductors
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SI1499DH Datasheet PDF : 11 Pages
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
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Si1499DH
Vishay Siliconix
5
4
3
Package Limited
2
1
0
0
25
2
50 75 100 125 150 175
TC - Case Temperature (°C)
Current Derating*
1
Duty Cycle = 0.5
* The power dissipation PD is based on TJ(max) = 150 °C, using
junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
below the package limit.
0.2
0.1
0.1
0.05
0.02
0.01
10 -4
2
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 125 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-3
10 -2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.0.202
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73338.
Document Number: 73338
S10-0792-Rev. F, 05-Apr-10
www.vishay.com
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