IXTA28P065T 查看數據表（PDF） - IXYS CORPORATION

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IXTA28P065T

TrenchP™ Power MOSFETs

IXYS CORPORATION 

IXTA28P065T

IXTP28P065T

Fig. 7. Input Admittance

-35

-30

-25

-20

-15

TJ = 125ºC

25ºC

- 40ºC

-10

-5

0

-3.0

-3.5

-4.0

-4.5

-5.0

-5.5

-6.0

-6.5

-7.0

VGS - Volts

Fig. 8. Transconductance

24

TJ = - 40ºC

20

25ºC

16

125ºC

12

8

4

0

0

-4

-8

-12

-16

-20

-24

-28

-32

-36

ID - Amperes

Fig. 9. Forward Voltage Drop of Intrinsic Diode

-70

-60

-50

-40

-30

TJ = 125ºC

-20

TJ = 25ºC

-10

0

-0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 -1.3 -1.4

VSD - Volts

Fig. 10. Gate Charge

-10

-9

VDS = - 33V

-8

I D = -14A

I G = -1mA

-7

-6

-5

-4

-3

-2

-1

0

0

5

10

15

20

25

30

35

40

45

50

QG - NanoCoulombs

10,000

f = 1 MHz

Fig. 11. Capacitance

Fig. 12. Forward-Bias Safe Operating Area

- 100

RDS(on) Limit

25µs

1,000

Ciss

-10

Coss

Crss

100

0

-5

-10

-15

-20

-25

-30

-35

-40

VDS - Volts

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

-1

-1

TJ = 150ºC

TC = 25ºC

Single Pulse

- 10

VDS - Volts

100µs

1ms

10ms

100ms

- 100

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