IXTA28P065T 查看數據表（PDF） - IXYS CORPORATION
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IXTA28P065T Datasheet PDF : 6 Pages
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Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
VDS = -10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = - 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10Ω (External)
Qg(on)
Qgs
Qgd
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
TO-220
Characteristic Values
Min. Typ. Max.
10
16
S
2030
pF
270
pF
127
pF
21
ns
29
ns
36
ns
23
ns
46
nC
20
nC
10
nC
0.50
1.5 °C/W
°C/W
IXTA28P065T
IXTP28P065T
TO-263 Outline
Pins:
1 - Gate
2,4 - Drain
3 - Source
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = - 28A, VGS = 0V, Note 1
trr
QRM
IRM
IF = -14A, -di/dt = -100A/μs
VR = - 33V, VGS = 0V
Characteristic Values
Min. Typ. Max.
- 28 A
-112 A
-1.5 V
31
ns
34
nC
- 2.2
A
TO-220 Outline
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Pins: 1 - Gate
3 - Source
2 - Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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