STP8NM60ND 查看數據表（PDF） - STMicroelectronics

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STP8NM60ND

N-channel 600 V, 0.59 Ω , 7 A, FDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK

STMicroelectronics 

Electrical characteristics

STx8NM60ND

Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs

vs temperature

temperature

VGS(th)

(norm)

AM03197v1

RDS(on)

(norm)

AM03198v1

1.9

1.00

1.7

1.5

0.90

1.3

1.1

0.80

0.9

0.70

-50 -25 0 25 50 75 100 TJ(°C)

0.7

0.5

-50 -25 0

25 50 75 100 TJ(°C)

Figure 16. Source-drain diode forward

characteristics

Figure 17. Normalized BVDSS vs temperature

VSD

(V)

1.2 TJ=-50°C

AM03199v1

BVDSS

(norm)

1.07

AM031200v1

1.0

0.8

0.6

TJ=150°C

0.4

TJ=25°C

0.2

0

0

10 20 30 40 50 ISD(A)

1.05

1.03

1.01

0.99

0.97

0.95

0.93

-50 -25 0

25 50 75 100 TJ(°C)

8/17

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