STP8NM60ND 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

生产厂家

STP8NM60ND

N-channel 600 V, 0.59 Ω , 7 A, FDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK

STMicroelectronics 

STD8NM60ND, STF8NM60ND

STP8NM60ND, STU8NM60ND

N-channel 600 V, 0.59 Ω , 7 A, FDmesh™ II Power MOSFET

TO-220, TO-220FP, IPAK, DPAK

Features

Type

VDSS

(@Tjmax)

RDS(on)

max

ID

STD8NM60ND

STF8NM60ND

STP8NM60ND

STU8NM60ND

650 V

650 V

650 V

650 V

< 0.70 Ω

< 0.70 Ω

< 0.70 Ω

< 0.70 Ω

7A

7A

7 A(1)

7A

1. Limited only by maximum temperature allowed

■ The worldwide best RDS(on)* area amongst the

fast recovery diode devices

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

■ Extremely high dv/dt and avalanche

capabilities

Application

■ Switching applications

Description

The FDmesh™ II series belongs to the second

generation of MDmesh™ technology. This

revolutionary Power MOSFET associates a new

vertical structure to the company’s strip layout and

associates all advantages of reduced on-

resistance and fast switching with an intrinsic fast-

recovery body diode.Strongly recommended for

bridge topologies, in ZVS phase-shift converters.

Table 1. Device summary

Order codes

Marking

STD8NM60ND

STF8NM60ND

STP8NM60ND

STU8NM60ND

8NM60ND

8NM60ND

8NM60ND

8NM60ND

3

2

1

TO-220

3

1

DPAK

3

2

1

IPAK

3

2

1

TO-220FP

Figure 1. Internal schematic diagram

Package

DPAK

TO-220FP

TO-220

IPAK

Packaging

Tape and reel

Tube

Tube

Tube

February 2009

Rev 1

1/17

www.st.com

17

Share Link: