MCIMX286DVM4B 查看數據表（PDF） - Freescale Semiconductor

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MCIMX286DVM4B

i.MX28 Applications Processors Data Sheet for Consumer Products

Freescale Semiconductor 

3.2 Thermal Characteristics

The thermal resistance characteristics for the device are given in Table 22. These values are measured

under the following conditions:

• Two layer Substrate

• Substrate solder mask thickness: 0.025 mm

• Substrate metal thicknesses: 0.016 mm

• Substrate core thickness: 0.160 mm

• Core via I.D: 0.068 mm, Core via plating 0.016 mm

• Flag: trace style with ground balls under the die connected to the flag

• Die Attach: 0.033 mm non-conductive die attach, k = 0.3 W/m K

• Mold Compound: generic mold compound, k = 0.9 W/m K

Table 22. Thermal Resistance Data

Rating

Junction to ambient1 natural convection

Junction to ambient1 natural convection

Single layer board

(1s)

Four layer board (2s2p)

RθJA

Value

Unit

62

°C/W

RθJA 36

°C/W

Junction to ambient1 (@200 ft/min)

Single layer board

(1s)

RθJMA 53

°C/W

Junction to ambient1 (@200 ft/min)

Four layer board

(2s2p)

RθJMA 33

°C/W

Junction to boards2

RθJB 24

°C/W

Junction to case (top)3

RθJCtop 15

°C/W

Junction to package top4

Natural Convection

ΨJT

3

°C/W

1 Junction-to-Ambient Thermal Resistance determined per JEDEC JESD51-2 and JESD51-6. Thermal test board meets

JEDEC specification for this package.

2 Junction-to-Board thermal resistance determined per JEDEC JESD51-8. Thermal test board meets JEDEC specification

for the specified package.

3 Junction-to-Case at the top of the package determined using MIL-STD 883 Method 1012.1. The cold plate temperature is

used for the case temperature. Reported value includes the thermal resistance of the interface layer.

4 Thermal characterization parameter indicating the temperature difference between the package top and the junction

temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is written

as Psi-JT.

3.3 I/O DC Parameters

This section includes the DC parameters of the following I/O types:

• DDR I/O: Mobile DDR (LPDDR1), standard 1.8 V DDR2, and low-voltage 1.5 V DDR2

(LVDDR2)

• General purpose I/O (GPIO)

i.MX28 Applications Processors Data Sheet for Consumer Products, Rev. 1

Freescale Semiconductor

19

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