SIHG47N60S-E3 查看數據表（PDF） - Vishay Semiconductors
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SIHG47N60S-E3 Datasheet PDF : 7 Pages
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiHG47N60S
Vishay Siliconix
160
TOP
15V
14V
140
13V
12V
TJ =25 °C
11V
120
10V
9.0V
8.0V
100
7.0V
6.0V
80
BOTYTOM 5.0V
60
40
20
0
ıġ
5.0V
Ķġ
IJıġ
IJĶġ
ijıġ
VDS , Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics (TO-247)
3
2,5
ID=47A
2
1,5
1
0,5
VGS=10V
0
Įķı
Įĵı
Įijı
ı
ijı
ĵı
ķı
Ĺı
IJıı IJijı IJĵı IJķı
TJ , Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
100
TOP
15V
14V
13V
TJ=150°C
80
12V
11V
10V
9.0V
60
8.0V
7.0V
6.0V
BOTYTOM 5.0V
40
100 000
10 000
1000
Ciss
Coss
100
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd x Cds shorted
Crss = Cgd
Coss = Cds + Cgd
5.0V
20
0
ıġ
Ķġ
IJıġ
IJĶġ
ijıġ
VDS , Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics (TO-247)
10
Crss
1
0
100
200
300
400
500
600
VDS - Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
160
140
120
100
80
60
TJ=150°C
40
20
TJ=25°C
0
ıġ
Ķġ
IJıġ
IJĶġ
ijıġ
ijĶġ
VGS , Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
24
ID=47A
20
VDS=480V
VDS=300V
VDS=120V
16
12
8
4
0
0
50
100
150
200
250
300
350
QG, Total gate charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S15-0983-Rev. F, 27-Apr-15
3
Document Number: 91341
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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