SIHG47N60S-E3 查看數據表（PDF） - Vishay Semiconductors

零件编号

产品描述 (功能)

生产厂家

SIHG47N60S-E3

S Series Power MOSFET

Vishay Semiconductors 

www.vishay.com

SiHG47N60S

Vishay Siliconix

S Series Power MOSFET

PRODUCT SUMMARY

VDS (V) at TJ max.

RDS(on) max. at 25 °C (Ω)

Qg max. (nC)

Qgs (nC)

Qgd (nC)

Configuration

650

VGS = 10 V

216

39

57

Single

TO-247AC

0.07

D

S

D

G

G

S

N-Channel MOSFET

FEATURES

• Generation one

• Low figure-of-merit Ron x Qg

• 100 % avalanche tested

• Ultra low gate charge

• Ultra low Ron

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• PFC power supply stages

• Hard switching topologies

• Solar inverters

• UPS

• Motor control

• Server telecom

ORDERING INFORMATION

Package

Lead (Pb)-free

TO-247AC

SiHG47N60S-E3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (TJ = 150 °C)

Pulsed Drain Current a

Linear Derating Factor

VDS

VGS

VGS at 10 V

TC = 25 °C

TC = 100 °C

ID

IDM

Avalanche Energy (repetitive)

Single Pulse Avalanche Energy b

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt d

TJ = 125 °C

EAR

EAS

PD

TJ, Tstg

dV/dt

Soldering Recommendations (Peak Temperature) c

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. VDD = 50 V, starting TJ = 25 °C, L = 73.5 mH, Rg = 25 Ω, IAS = 7 A.

c. 1.6 mm from case.

d. ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C.

LIMIT

600

± 30

47

30

140

3.3

0.42

1800

417

-55 to +150

37

8.5

300

UNIT

V

A

W/°C

mJ

W

°C

V/ns

°C

S15-0983-Rev. F, 27-Apr-15

1

Document Number: 91341

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Share Link: