BTS3142D(2006) 查看數據表（PDF） - Infineon Technologies
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BTS3142D Datasheet PDF : 11 Pages
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Smart Low Side Power Switch
Power HITFET BTS 3142D
Maximum Ratings at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Drain source voltage
VDS
Drain source voltage for short circuit protection
Tj = -40...150°C
VDS(SC)
Continuous input current
IIN
-0.2V ≤ VIN ≤ 10V
VIN < -0.2V or VIN > 10V
Operating temperature
Storage temperature
Power dissipation
TC = 85 °C
6cm2 cooling area , TA = 85 °C
Unclamped single pulse inductive energy 1)
Load dump protection VLoadDump2) = VA + VS
VIN = 0 and 10 V, td = 400 ms, RI = 2 Ω,
RL = 3 Ω, VA = 13.5 V
Tj
Tstg
Ptot
EAS
VLD
Electrostatic discharge voltage (Human Body Model) VESD
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
Value
42
28
no limit
| IIN | ≤ 2
-40 ...+150
-55 ... +150
59
1.1
3.5
67.5
2
Unit
V
mA
°C
W
J
V
kV
Thermal resistance
junction - case:
SMD: junction - ambient
@ min. footprint
@ 6 cm2 cooling area 3)
RthJC
RthJA
1.1
K/W
115
55
1 Not tested, specified by design.
2VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.
Datasheet
2
Rev. 1.3, 2006-12-22
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