BTS3142D(2006) 查看數據表（PDF） - Infineon Technologies
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BTS3142D Datasheet PDF : 11 Pages
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Smart Low Side Power Switch
Power HITFET BTS 3142D
Electrical Characteristics
Parameter
at Tj = 25°C, unless otherwise specified
Characteristics
Drain source clamp voltage
Tj = - 40 ...+ 150, ID = 10 mA
Off-state drain current Tj = -40 ... +150°C
VDS = 32 V, VIN = 0 V
Input threshold voltage
ID = 1.2 mA, Tj = 25 °C
ID = 1.2 mA, Tj = 150 °C
On state input current
On-state resistance
VIN = 5 V, ID = 4.6 A, Tj = 25 °C
VIN = 5 V, ID = 4.6 A, Tj = 150 °C
On-state resistance
VIN = 10 V, ID = 4.6 A, Tj = 25 °C
VIN = 10 V, ID = 4.6 A, Tj = 150 °C
Nominal load current
Tj < 150°C, VIN = 10 V, TA = 85 °C, SMD 1)
Nominal load current
VIN = 10 V, VDS = 0.5 V, TC = 85 °C, Tj < 150°C
Current limit (active if VDS>2.5 V)2)
VIN = 10 V, VDS = 12 V, tm = 200 µs
Symbol
Values
Unit
min. typ. max.
VDS(AZ)
42
-
IDSS
-
1.5
VIN(th)
1.3 1.7
0.8
-
IIN(on)
-
10
RDS(on)
-
27
-
54
RDS(on)
-
23
-
46
ID(Nom)
4.6
-
ID(ISO)
12.6
-
ID(lim)
30
45
55 V
20 µA
V
2.2
-
30 µA
mΩ
34
68
28
56
A
-
-
55
1@ 6 cm2 cooling area
2Device switched on into existing short circuit (see diagram Determination of ID(lim)). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 µs.
Datasheet
3
Rev. 1.3, 2006-12-22
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