STD2N80K5 查看數據表（PDF） - STMicroelectronics

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STD2N80K5

N-channel 800 V, 3.5 Ω typ., 2 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

STMicroelectronics 

STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5

Electrical characteristics

Table 6. Switching times

Symbol

Parameter

Test conditions

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 400 V, ID = 1 A,

RG=4.7 Ω, VGS=10 V

Min. Typ. Max. Unit

-

8

-

ns

-

12

-

ns

-

19

-

ns

-

32

-

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM(1)

VSD(2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

ISD= 2 A, VGS=0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD= 2 A, VDD= 60 V

di/dt = 100 A/µs,

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD= 2 A,VDD= 60 V

di/dt=100 A/µs,

Tj=150 °C

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Min. Typ. Max. Unit

-

2

A

-

8

A

-

1.5 V

- 255

ns

-

1

µC

-

8

A

- 285

ns

- 1.45

µC

- 7.5

A

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

V(BR)GSO Gate-source breakdown voltage IGS= ± 1mA, ID= 0

30 -

-

V

The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD

capability of the device. The Zener voltage is appropriate for efficient and cost-effective

intervention to protect the device integrity. These integrated Zener diodes thus eliminate the

need for external components.

DocID024993 Rev 3

5/22

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