IXTV18N60PS 查看數據表（PDF） - IXYS CORPORATION

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IXTV18N60PS

PolarHV Power MOSFET

IXYS CORPORATION 

Symbol

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg(on)

Qgs

Qgd

RthJC

RthCS

IXTQ 18N60P

IXTV 18N60P IXTV 18N60PS

Test Conditions

Characteristic Values

(T

J

=

25°C,

unless

otherwise

specified)

Min. Typ. Max.

VDS = 20 V; ID = 0.5 ID25, pulse test

VGS = 0 V, VDS = 25 V, f = 1 MHz

VGS = 10 V, VDS = 0.5 VDSS, ID = ID25

RG = 5 Ω (External)

VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25

(TO-3P, PLUS220)

9 16

S

2500

pF

278

pF

23

pF

21

ns

22

ns

62

ns

22

ns

49

nC

15

nC

17

nC

0.35 °C/W

0.21

°C/W

TO-3P (IXTQ) Outline

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(TJ = 25°C, unless otherwise specified)

Min. Typ. Max.

IS

VGS = 0 V

18 A

ISM

Repetitive

54 A

VSD

IF = IS, VGS = 0 V,

Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %

1.5 V

trr

IF = 18A, -di/dt = 100 A/μs

VR = 100V

500

ns

PLUS220 (IXTV) Outline

PLUS220SMD (IXTV_S) Outline

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844

one or moreof the following U.S. patents: 4,850,072 5,017,508

4,881,106 5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1

6,534,343

6,583,505

6,683,344 6,727,585

6,710,405B2 6,759,692

6,710,463 6,771,478 B2

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