STL18N60M2(2014) 查看數據表（PDF） - STMicroelectronics

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STL18N60M2
(Rev.:2014)

N-channel 600 V, 0.278 Ω typ., 9 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package

STMicroelectronics 

STL18N60M2

1

Electrical ratings

Electrical ratings

Symbol

Table 2. Absolute maximum ratings

Parameter

Value

VGS

(1)

ID

(1)

ID

(2)

IDM

(2)

PTOT

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Avalanche current, repetitive or not-

IAR repetitive (pulse width limited by Tj max)

EAS

(3)

dv/dt

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Peak diode recovery voltage slope

(4)

dv/dt MOSFET dv/dt ruggedness

Tstg Storage temperature

Tj Max. operating junction temperature

1. The value is rated according to Rthj-case and limited by package

2. Pulse width limited by safe operating area

3. ISD ≤ 9 A, di/dt ≤ 400 A/μs, VDSpeak ≤ V(BR)DSS, VDD = 400 V

4. VDS ≤ 480 V

± 25

9

5.5

22

57

2

135

15

50

- 55 to 150

150

Symbol

Table 3. Thermal data

Parameter

Rthj-case Thermal resistance junction-case max

(1)

Rthj-amb Thermal resistance junction-amb max

1. When mounted on 1inch² FR-4 board, 2 oz Cu

Value

2.2

59

Unit

V

A

A

A

W

A

mJ

V/ns

V/ns

°C

°C

Unit

°C/W

°C/W

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