2SB562 查看數據表（PDF） - Renesas Electronics

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产品描述 (功能)

生产厂家

2SB562

Silicon PNP Epitaxial

Renesas Electronics 

2SB562

Electrical Characteristics

Item

Symbol Min

Collector to base breakdown voltage

V(BR)CBO

–25

Collector to emitter breakdown voltage V(BR)CEO –20

Emitter to base breakdown voltage

V(BR)EBO

–5

Collector cutoff current

DC current transfer ratio

ICBO

—

hFE*1

85

Collector to emitter saturation voltage

VCE(sat)

—

Base to emitter voltage

VBE

—

Gain bandwidth product

fT

—

Collector output capacitance

Cob

—

Note: 1. The 2SB562 is grouped by hFE as follows.

B

C

85 to 170 120 to 240

Typ

—

—

—

—

—

–0.2

–0.8

350

38

Max

—

—

—

–1.0

240

–0.5

–1.0

—

—

Unit

V

V

V

µA

V

V

MHz

pF

(Ta = 25°C)

Test conditions

IC = –10 µA, IE = 0

IC = –1 mA, RBE = ∞

IE = –10 µA, IC = 0

VCB = –20 V, IE = 0

VCE = –2 V,

IC = –0.5 A (Pulse test)

IC = –0.8 A,

IB = –0.08 A (Pulse test)

VCE = –2 V,

IC = –0.5 A (Pulse test)

VCE = –2 V,

IC = –0.5 A (Pulse test)

VCB = –10 V, IE = 0

f = 1 MHz

Rev.2.00 Aug 10, 2005 page 2 of 5

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