4N52K3(2018) 查看數據表（PDF） - STMicroelectronics

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4N52K3
(Rev.:2018)

N-channel 525 V, 2.1 Ω typ., 2.5 A MDmesh™ K3 Power MOSFETs in DPAK, TO-220 and IPAK packages

STMicroelectronics 

STD4N52K3, STP4N52K3, STU4N52K3

Datasheet

N-channel 525 V, 2.1 Ω typ., 2.5 A MDmesh™ K3 Power MOSFETs in

DPAK, TO-220 and IPAK packages

TAB

3

DPAK 1

TAB

TAB

TO-220

1 23

IPAK

123

D(2, TAB)

G(1)

S(3)

AM01475V1

Product status link

STD4N52K3

STP4N52K3

STU4N52K3

Features

Order code

VDS

RDS(on)max.

STD4N52K3

STP4N52K3

525 V

2.6 Ω

STU4N52K3

• 100% avalanche tested

• Extremely high dv/dt capability

• Very low intrinsic capacitance

• Improved diode reverse recovery characteristics

• Zener-protected

ID

2.5 A

2.5 A

2.5 A

Package

DPAK

TO-220

IPAK

Applications

• Switching applications

Description

These MDmesh™ K3 Power MOSFETs are the result of improvements applied to

STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical

structure. These devices boast an extremely low on-resistance, superior dynamic

performance and high avalanche capability, rendering them suitable for the most

demanding applications.

DS7026 - Rev 3 - August 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

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