SMBT2907AE6327 查看數據表（PDF） - Infineon Technologies
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SMBT2907AE6327 Datasheet PDF : 7 Pages
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PNP Silicon Switching Transistor
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary type:
SMBT2222A/ MMBT2222A (NPN)
SMBT2907A/MMBT2907A
3
2
1 VPS05161
Type
Marking
SMBT2907A/MMBT2907A s2F
1=B
Pin Configuration
2=E
3=C
Package
SOT23
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Total power dissipation, TS = 77 °C
Junction temperature
Storage temperature
VCEO
VCBO
VEBO
IC
Ptot
Tj
Tstg
Thermal Resistance
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
Value
60
60
5
600
330
150
-65 ... 150
220
Unit
V
mA
mW
°C
K/W
1
Jun-12-2002
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