FDS8878 查看數據表（PDF） - Fairchild Semiconductor
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FDS8878 Datasheet PDF : 12 Pages
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April 2007
FDS8878
tm
N-Channel PowerTrench® MOSFET
30V, 10.2A, 14mΩ
Features
rDS(on) = 14mΩ, VGS = 10V, ID = 10.2A
rDS(on) = 17mΩ, VGS = 4.5V, ID = 9.3A
High performance trench technology for extremely low
rDS(on)
Low gate charge
High power and current handling capability
RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(on) and fast switching speed.
Applications
DC/DC converters
Branding Dash
5
1
2
3
4
SO-8
5
4
6
3
7
2
8
1
©2007 Fairchild Semiconductor Corporation
1
FDS8878 Rev. B
www.fairchildsemi.com
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