SI4410DYTRPBF 查看數據表（PDF） - International Rectifier
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SI4410DYTRPBF Datasheet PDF : 9 Pages
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Si4410DYPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
30 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.010 0.0135
––– 0.015 0.020 Ω
VGS = 10V, ID = 10A
VGS = 4.5V, ID = 5.0A
VGS(th)
Gate Threshold Voltage
1.0 ––– ––– V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
––– 35 ––– S VDS = 15V, ID = 10A
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0
––– ––– 25
µA
VDS = 30V, VGS = 0V
VDS = 30V, VGS = 0V, TJ = 55°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 nA VGS = -20V
––– ––– 100
VGS = 20V
Qg
Total Gate Charge
––– 30 45
ID = 10A
Qgs
Gate-to-Source Charge
––– 5.4 ––– nC VDS = 15V
Qgd
Gate-to-Drain ("Miller") Charge
––– 6.5 –––
VGS = 10V, See Fig. 10
td(on)
Turn-On Delay Time
––– 11 –––
VDD = 25V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 7.7 ––– ns ID = 1.0A
––– 38 –––
RG = 6.0Ω
tf
Fall Time
––– 44 –––
RD = 25Ω,
Ciss
Input Capacitance
––– 1585 –––
VGS = 0V
Coss
Output Capacitance
––– 739 ––– pF VDS = 15V
Crss
Reverse Transfer Capacitance
––– 106 –––
ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Diode Conduction)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
2.3
showing the
A integral reverse
G
50
p-n junction diode.
S
––– 0.7 1.1 V TJ = 25°C, IS = 2.3A, VGS = 0V
––– 50 80 ns TJ = 25°C, IF = 2.3A
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on FR4 Board, t ≤10 sec
Starting TJ = 25°C, L = 8.0mH
RG = 25Ω, IAS = 10A. (See Figure 15)
ISD ≤2.3A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
2
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