MJ413 查看數據表（PDF） - Inchange Semiconductor

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MJ413

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

MJ413

DESCRIPTION

·High Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 325V(Min.)

·DC Current Gain-

: hFE= 20-80@ IC= 0.5A

APPLICATIONS

·Designed for medium to high voltage inverters, converters,

regulators and switching circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO Collector-Base Voltage

400

V

VCEX Collector-Emitter Voltage

400

V

VEBO Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

10

A

IBB

Base Current-Continuous

2

A

PC

Collector Power Dissipation@TC=25℃

125

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~200 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c Thermal Resistance,Junction to Case

1.0

℃/W

isc Website：www.iscsemi.cn

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