STB11N52K3 查看數據表（PDF） - STMicroelectronics

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STB11N52K3

N-channel 525 V, 0.41 Ω, 10 A SuperMESH3™ Power MOSFET in D²PAK,TO-220FP and TO-220 packages

STMicroelectronics 

STB11N52K3, STF11N52K3, STP11N52K3

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

TO-220, D²PAK TO-220FP

VDS Drain- source voltage

VGS Gate- source voltage

ID Drain current (continuous) at TC = 25 °C

ID

IDM (2)

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

PTOT Total dissipation at TC = 25 °C

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by TJ max)

Single pulse avalanche energy

EAS (starting TJ = 25 °C, ID = IAR, VDD = 50 V)

VESD(G-S)

Gate source ESD(HBM-C = 100 pF,

R = 1.5 kΩ)

dv/dt(3) Peak diode recovery voltage slope

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s; TC = 25 °C)

TJ Operating junction temperature

Tstg Storage temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤ 10 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS

525

± 30

10

10 (1)

6

6 (1)

40

40 (1)

125

30

5

170

2500

12

2500

- 55 to 150

Unit

V

V

A

A

A

W

A

mJ

V

V/ns

°C

Table 3. Thermal data

Symbol

Parameter

Rthj-case

Rthj-amb

Rthj-pcb

TJ

Thermal resistance junction-case max

Thermal resistance junction-amb max

Thermal resistance junction-pcb max

Maximum lead temperature for soldering

purpose

Value

TO-220 TO-220FP

1

4.17

62.50

Unit

D²PAK

1 °C/W

°C/W

30 °C/W

300

°C/W

Doc ID 018868 Rev 2

3/20

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