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ISPLSI3256A-50LQI 查看數據表(PDF) - Lattice Semiconductor

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ISPLSI3256A-50LQI
Lattice
Lattice Semiconductor 
ISPLSI3256A-50LQI Datasheet PDF : 13 Pages
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Specifications ispLSI 3256A
Switching Test Conditions
Input Pulse Levels
Input Rise and Fall Time
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
3-state levels are measured 0.5V from
steady-state active level.
GND to 3.0V
3ns 10% to 90%
1.5V
1.5V
See Figure 2
Table 2-0003/3256A
Figure 2. Test Load
Device
Output
+ 5V
R1
R2
Test
Point
CL*
Output Load conditions (See Figure 2)
TEST CONDITION
A
Active High
B
Active Low
Active High to Z
C
at VOH -0.5V
Active Low to Z
at VOL+0.5V
R1
470
470
R2
390
390
390
390
CL
35pF
35pF
35pF
5pF
470
3905pF
Table 2 - 0004A
*CL includes Test Fixture and Probe Capacitance.
0213A
DC Electrical Characteristics
Over Recommended Operating Conditions
SYMBOL
PARAMETER
CONDITION
MIN. TYP.3 MAX. UNITS
VOL
Output Low Voltage
IOL= 8 mA
0.4
V
VOH
Output High Voltage
IOH = -4 mA
2.4
V
IIL
Input or I/O Low Leakage Current
0V VIN VIL (Max.)
-10
µA
IIH
Input or I/O High Leakage Current
3.5V VIN VCC
10
µA
IIL-isp ispEN Input Low Leakage Current
0V VIN VIL
-150 µA
IIL-PU I/O Active Pull-Up Current
0V VIN VIL
-150 µA
IOS1
Output Short Circuit Current
VCC= 5V, VOUT = 0.5V
-200 mA
ICC2, 4 Operating Power Supply Current
VIL= 0.0V, VIH = 3.0V
Commercial
200
mA
fCLOCK = 1 MHz
Industrial
200
mA
Table 2-0007/3256A
1. One output at a time for a maximum duration of one second. VOUT = 0.5V was selected to avoid test problems
by tester ground degradation. Characterized but not 100% tested.
2. Measured using 16 16-bit counters.
3. Typical values are at VCC= 5V and TA= 25°C.
4. Maximum ICC varies widely with specific device configuration and operating frequency. Refer to the Power Consumption
section of this data sheet and Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM to
estimate maximum ICC .
5

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