DF005S 查看數據表（PDF） - Vishay Siliconix
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DF005S Datasheet PDF : 4 Pages
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DF005S thru DF10S
Vishay General Semiconductor
10
1
0.1
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.01
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Figure 3. Typical Forward Characteristics Per Diode
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
100
100
10
TJ = 125 °C
1
0.1
TJ = 50 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
10
1
0.1
0.01
0.1
1
10
100
t - Heating Time (s)
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.205 (5.2)
0.195 (5.0)
Case Style DFS
0.047 (1.20)
0.040 (1.02)
Mounting Pad La yout
0.047 MIN.
(1.20 MIN.)
0.335 (8.51)
0.320 (8.13) 45°
0.130 (3.3) 0.013 (0.330)
0.120 (3.05) 0.009 (0.241)
0.404 (10.3)
0.386 (9.80)
0.255 (6.5)
0.245 (6.2)
0.060 MIN.
(1.52 MIN.)
0.404 MAX.
(10.26 MAX.)
0.205 (5.2)
0.195 (5.0)
0.060 (1.524)
0.040 (1.016) 0.013 (0.330)
0.003 (0.076)
Document Number: 88573 For technical questions within your region, please contact one of the following:
Revision: 30-Jan-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
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