APT5024BFLL 查看數據表（PDF） - Advanced Power Technology

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APT5024BFLL

POWER MOS 7® FREDFET

Advanced Power Technology 

DYNAMIC CHARACTERISTICS

Symbol Characteristic

Test Conditions

Ciss

Coss

Crss

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Eon

Eoff

Eon

Eoff

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge 3

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Turn-on Switching Energy 6

Turn-off Switching Energy

Turn-on Switching Energy 6

Turn-off Switching Energy

VGS = 0V

VDS = 25V

f = 1 MHz

VGS = 10V

VDD = 250V

ID = 22A @ 25°C

RESISTIVE SWITCHING

VGS = 15V

VDD = 250V

ID = 22A @ 25°C

RG = 0.6Ω

INDUCTIVE SWITCHING @ 25°C

VDD = 333V, VGS = 15V

ID = 22A, RG = 5Ω

INDUCTIVE SWITCHING @ 125°C

VDD = 333V VGS = 15V

ID = 22A, RG = 5Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol Characteristic / Test Conditions

IS

Continuous Source Current (Body Diode)

ISM Pulsed Source Current 1 (Body Diode)

VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID 22A)

dv/dt Peak Diode Recovery dv/dt 5

Reverse Recovery Time

trr

(IS = -ID 22A, di/dt = 100A/µs)

Tj = 25°C

Tj = 125°C

Reverse Recovery Charge

Qrr

(IS = -ID 22A, di/dt = 100A/µs)

Tj = 25°C

Tj = 125°C

IRRM

Peak Recovery Current

(IS = -ID 22A, di/dt = 100A/µs)

Tj = 25°C

Tj = 125°C

THERMAL CHARACTERISTICS

Symbol Characteristic

MIN

MIN

MIN

APT5024BFLL_SFLL

TYP MAX UNIT

1900

417

pF

27

43

12

nC

24

8

6

ns

18

2

167

86

µJ

262

99

TYP MAX UNIT

22 Amps

88

1.3 Volts

15 V/ns

250

ns

400

1.9

µC

6

15

Amps

26

TYP MAX UNIT

RθJC

RθJA

Junction to Case

Junction to Ambient

0.47

40

°C/W

1 Repetitive Rating: Pulse width limited by maximum junction

temperature

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

4 Starting Tj = +25°C, L = 3.97mH, RG = 25Ω, Peak IL = 22A

5 dv/dt numbers reflect the limitations of the test circuit rather than the

device itself. IS ≤ -ID27A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C

6 Eon includes diode reverse recovery. See figures 18, 20.

APT Reserves the right to change, without notice, the specifications and information contained herein.

0.50

0.9

0.40

0.7

0.30

0.20

0.10

0

10-5

0.5

Note:

t1

0.3

t2

Duty Factor D = t1/t2

0.1

Peak TJ = PDM x ZθJC + TC

0.05

SINGLE PULSE

10-4

10-3

10-2

10-1

1.0

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

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