HYB3164160AT 查看數據表（PDF） - Siemens AG

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HYB3164160AT

4M x 16-Bit Dynamic RAM ( 8k, 4k & 2k Refresh)

Siemens AG 

HYB3164(5/6)160AT(L)-40/-50/-60

4M x 16-DRAM

DC-Characteristics (cont’d)

TA = 0 to 70 °C, VSS = 0 V, VCC = 3.3 V ± 0.3 V

Parameter

Symbol

refresh version

2k

4k

8k

Operating Current

ICC1

-40 ns version

-50 ns version

-60 ns version

(RAS, CAS, address cycling: tRC = tRC min.)

250 155 110

210 130

90

170 105

75

Standby Current

(RAS=CAS= Vih)

ICC2

2

2

2

RASOnly Refresh Current:

-

ICC3

-40 ns version

-50ns version

-60 ns version

(RAS cycling: CAS = VIH: tRC = tRC min.)

250 155 110

210 130

90

170 105

75

Fast Page Mode Current:

ICC4

-40 ns version

-50 ns version

-60 ns version

(RAS = VIL, CAS, address cycling: tPC=tPC min.)

Standby Current

ICC5

(RAS=CAS= Vcc-0.2V)

70

70

70

60

60

60

50

50

50

900 900 900

Standby Current (L-Version)

(RAS=CAS= Vcc-0.2V)

ICC5

200 200 200

CAS Before RAS Refresh Current

ICC6

-40 ns version

-50 ns version

-60 ns version

(RAS, CAS cycling: tRC = tRC min.)

250 155 155

210 130 130

170 105 105

Self Refresh Current (L-version only)

ICC7

400 400 400

(CBR cycle with tRAS>TRASSmin, CAS held low,

WE = Vcc-0.2V, Address and Din=Vcc-0.2V or 0.2V)

Unit Note

mA 2) 3) 4)

mA

mA

mA –

mA 2) 4)

mA

mA

mA 2) 3) 4)

mA

mA

µA –

µA –

mA 2) 4)

mA

mA

µA

Semiconductor Group

9

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