SPB18P06PG 查看數據表（PDF） - Infineon Technologies

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SPB18P06PG

SIPMOS® Power-Transistor

Infineon Technologies 

Parameter

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Gate plateau voltage

Reverse Diode

Diode continuous forward current

Diode pulse current

Diode forward voltage

Reverse recovery time

Reverse recovery charge

Symbol Conditions

SPB18P06P G

min.

Values

typ.

Unit

max.

C iss

-

C oss

V GS=0 V, V DS=-25 V,

f =1 MHz

-

C rss

-

t d(on)

-

tr

V DD=-30 V, V GS=-

-

10 V, I D=-13.2 A,

t d(off)

R G=2.7 Ω

-

tf

-

690

860 pF

230

290

95

120

12

18 ns

5.8

8.7

25

37

37

11

16.5

Q gs

-

Q gd

V DD=-48 V, I D=-

-

Qg

18.6 A, V GS=0 to -10 V -

V plateau

-

-4.1

-11

-21

-5.94

-5.5 nC

-17

-28

-V

IS

I S,pulse

T A=25 °C

V SD

V GS=0 V, I F=18.6 A,

T j=25 °C

t rr

V R=30 V, I F=|I S|,

Q rr

di F/dt =100 A/µs

-

-

-18.6 A

-

-

-74.8

-

-0.99 -1.33 V

-

70

105 ns

-

139

208 nC

Rev 1.6

page 3

2012-09-07

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