BM29F400B 查看數據表（PDF） - Unspecified

零件编号

产品描述 (功能)

生产厂家

BM29F400B

4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY

Unspecified 

BRIGHT

Microelectronics

Inc.

Preliminary BM29F400T/BM29F400B

PARAMETER

RATING

Commercial (C) Devices

0 to +70

Industrial (I) Devices

-40 to +85

Extended (I) Devices

-55 to +125

Vcc Supply Voltage

Vcc for BM29F400-90

+4.5 to 5.5

Note: Operating ranges define those limits between which the functionality of the device is guaranteed.

UNIT

°C

°C

°C

V

*Notice: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a

stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational

sections of this specification is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may

affect device reliability.

Maximum Negative Overshoot Waveform

+0.8 V

-0.5 V

-2.0 V

20 nS

20 nS

20 nS

Figure 5.

Maximum positive Overshoot Waveform

Vcc + 2.0 V

Vcc + 0.5 V

2.0 V

20 nS

20 nS

Figure 6.

20 nS

A Winbond Company

- 21 -

Publication Release Date: May 1999

Revision A1

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