SMJ44C251B 查看數據表（PDF） - Austin Semiconductor

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SMJ44C251B

256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM

Austin Semiconductor 

Austin Semiconductor, Inc.

VRAM

SMJ44C251B

MT42C4256

FIGURE 1: EXAMPLE OF WRITE-PER-BIT OPERATIONS

DQ Mask = H: Write to I/O enable

= L: Write to I/O disable

FIGURE 2: EXAMPLE BLOCK-WRITE DIAGRAM OPERATIONS

NOTES:

* W\ must be low during the block-write cycle.

DQ0–DQ3 are latched on the later of W\ or CAS\ falling edge except in block 6 (see legend).

LEGEND:

1. Refresh address

2. Row address

3. Block address (A2 –A8)

4. Color-register data

5. Column-mask data

6. DQ-mask data. DQ0–DQ3 are latched on the falling edge of RAS\.

SMJ44C251B/MT42C4256

Rev. 0.1 12/03

9

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

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