IS62VV25616L-85TI 查看數據表（PDF） - Integrated Silicon Solution

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IS62VV25616L-85TI

256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM

Integrated Silicon Solution 

IS62VV25616L/LL

ISSI ®

AC TEST CONDITIONS

Parameter

Input Pulse Level

Input Rise and Fall Times

Input and Output Timing

and Reference Level

Output Load

AC TEST LOADS

Unit

0.4V to VCC - 0.2V

5 ns

0.9V

See Figures 1 and 2

1.8V

3070 Ω

OUTPUT

30 pF

Including

jig and

scope

3150 Ω

Figure 1

1.8V

3070 Ω

OUTPUT

5 pF

Including

jig and

scope

Figure 2

3150 Ω

IS62VV25616L POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

Symbol Parameter

Test Conditions

-70

-85

-100

Min. Max. Min. Max. Min. Max. Unit

ICC

Vcc Dynamic Operating VCC = Max.,

Com.

— 20

— 15

— 10

mA

Supply Current

IOUT = 0 mA, f = fMAX

Ind.

— 25

— 20

— 15

ICC1

Operating Supply

Current

VCC = Max.,

Com.

IOUT = 0 mA, f = 1 MHZ Ind.

—3

—3

—3

—3

—3

mA

—3

ISB1

TTL Standby Current VCC = Max.,

(TTL Inputs)

VIN = VIH or VIL

CE ≥ VIH , f = 0

OR

Com.

Ind.

— 0.3

— 0.3

— 0.3

— 0.3

— 0.3 mA

— 0.3

ULB Control

Vcc = Max., VIN = VIH or VIL

CE = VIL, f = 0, UB = VIH, LB = VIH

ISB2

CMOS Standby

VCC = Max.,

Com.

— 10

— 10

— 10

µA

Current (CMOS Inputs) CE ≥ VCC – 0.2V,

Ind.

— 10

— 10

— 10

VIN ≥ VCC – 0.2V, or

VIN ≤ 0.2V, f = 0

OR

ULB Control

VCC = Max., CE = VIL

VIN ≤ 0.2V, f = 0; UB / LB = VCC – 0.2V

Note:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

4

Integrated Silicon Solution, Inc. — 1-800-379-4774

PRELIMINARY INFORMATION Rev. 00C

11/30/00

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