RF2117 查看數據表（PDF） - RF Micro Devices
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RF2117 Datasheet PDF : 8 Pages
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Preliminary
RF2117
• 3.6V Analog Handsets
• 400MHz Industrial Radios
• Analog Communication Systems
• Portable Battery Powered Equipment
2
The RF2117 is a high power amplifier IC. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in analog cellu-
lar phone transmitters between 400MHz and 500MHz or
ISM applications operating at 433MHz. The device is
packaged in a low cost 16-lead plastic package with a
metal backside. The device is self-contained with the
exception of the output matching network and power sup-
ply feed line.
.393
.386
.244
.230
1
.021
.015
.050
.004
.000
.158
.152
.065
.055
8°MAX
5°MIN
.035 .0098
.016 .0075
Package Weight
typically 0.22 grams
EXPOSED
HEATSINK
.287
.271
.087
.071
Si BJT
GaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
VREG 1
VCC1 2
LTUNE 3
Q1C 4
GND 5
RFIN 6
NC 7
VPD 8
Bias
Circuits
16 NC
15 NC
14 RFOUT
13 RFOUT
12 RFOUT
11 NC
10 NC
9 NC
!"
• Single 3V to 5.5V Supply
• Up to 2W CW Output Power
• 33dB Small Signal Gain
• >50% Efficiency
• 400MHz to 500MHz Operation
RF2117
High Efficiency 400MHz Amplifier
RF2117 PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A0 991201
2-47
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