TSH511
Electrical characteristics
Table 4.
Symbol
VCC = 2.7V, Tamb = 25°C, faudio = 1kHz, fcarrier = 2.8MHz, frequency deviation = +/-75kHz
(unless otherwise specified) (continued)
Parameter
Test conditions
Min Typ Max Unit
ZAMP_IN
Input impedance defined as
RAMP_IN in parallel with CAMP_IN
ZAMP_OUT Output impedance
P1dBAMP 1dB compression point
BWAMP -3dB AMP bandwidth
Limiter (LIM) section
RAMP_IN
CAMP_IN
ZL = 2kΩ
ZL = 2kΩ
fcarrier= 2.8MHz
ZL = 2kΩ
10
kΩ
2
pF
350
Ω
560
mVRMS
250
11
MHz
GLIM
ZLIM_IN
VLIM_OUT
Voltage gain
Input impedance defined as
RLIM_IN in parallel with CLIM_IN
Output voltage
FM demodulator section
ZL= 15kΩ tied to GND
RLIM_IN
CLIM_IN
ZL = 15kΩ tied to GND
50 54 60
dB
15
kΩ
2
pF
170
mVpp
VDEM Output voltage
ZDEM_OUT Output impedance
Squelch section
+-75kHz FM deviation
typical application
schematic, ZL = 4kΩ
700 800 900 mVRMS
100
Ω
ATT
Audio attenuation on each receiver
when audio buffers are muted.
RX1 and RX2 audio buffers
muted, ZL = 16Ω on both
audio buffers
55
65
ZN_IN Noise amplifier input impedance
2
VN_TH Comparator threshold
from muted to unmuted
state
9
Rmute = 22kΩ, fIN = 100kHz
VN_HYS Comparator hysteresis
Rmute = 22kΩ, fIN = 100kHz
1
Current sinks on pin 25 to discharge
Imute_sink
Cmute capacitor: ramp generator
controlling the attenuation from ON
Voltage on pin 25 = 1.7V
24
to OFF states of audio buffers.
Current sources on pin 25 to charge
Imute_source
Cmute capacitor: ramp generator
controlling the attenuation from OFF
Voltage on pin 25 = 1.7V
14
to ON states of audio buffers.
dB
kΩ
mVRMS
mVRMS
µA
µA
Audio buffers
ZOD-IN
BW1dB
POUT_OD
THDOD
Input impedance
-1dB bandwidth
Output power
Distortion in line driver mode
200
kΩ
ZL = 16Ω
35
kHz
ZL= 16Ω, VOD_IN=70mVRMS 15
20
mW
Vout = 0.5 VRMS, ZL= 10kΩ
0.2 0.3
%
7/25