WIMN10 查看數據表（PDF） - Weitron Technology

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WIMN10

Surface Mount Switching Multi-Chip Diode Array

Weitron Technology 

WIMN10

Typical Characteristics

2.0 k

+10 V 820 Ω

100 µH

I

F

0.1µF

tr

tp

t

IF

10%

0.1 µF

50 Ω OUTPUT

PULSE

GENERATOR

D.U.T.

90%

50 Ω INPUT

SAMPLING

INPUT SIGNAL

IR

OSCILLOSCOPE

V

R

t rr

t

i R(REC) = 1.0 mA

OUTPUT PULSE

(I F = I R = 10 mA; MEASURED

at i R(REC) = 1.0 mA)

Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA.

Notes: 2. Input pulse is adjusted so I is equal to 10mA.

R(peak)

Notes: 3. t p » t rr

Figure 1. Recovery Time Equivalent Test Circuit

CURVES APPLICABLE TO EACH DIODE

100

10

T A = 85°C

1.0

10

T A = – 40°C

0.1

1.0

T A = 25°C

0.01

T A = 150°C

T A = 125°C

T A = 85°C

T A = 55°C

0.1

0.2

0.4

0.6

0.8

1.0

1.2

V F , FORWARD VOLTAGE (VOLTS)

Figure 2. Forward Voltage

0.001

0

T A = 25°C

10

20

30

40

50

V R , REVERSE VOLTAGE (VOLTS)

Figure 3. Leakage Current

0.68

0.64

0.60

0.56

0.52

0

2

4

6

8

V R , REVERSE VOLTAGE (VOLTS)

Figure 4. Capacitance

WEITRON

3/3

http://www.weitron.com.tw

04-Mar-09

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