TISP61512 查看數據表（PDF） - Power Innovations
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TISP61512
Power Innovations
TISP61512 Datasheet PDF : 11 Pages
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TISP61511D, TISP61512P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
JULY 1995 - REVISED SEPTEMBER 1997
STANDARD
ETS 300 047-1
RLM88/I3124
K17, K20, K21
TR-NWT-001089
IMPULSE GENERATORS USED FOR RATED VALUES
PEAK
VOLTAGE
SETTING
V
3000
1600
1600
1000
VOLTAGE
WAVE
FORM
µs
1.2/50
0.5/700
10/700
10/1000
GENERATOR
FICTIVE SOURCE
IMPEDANCE
Ω
38
40
40
10
EXTERNAL
SERIES
RESISTANCE
Ω
0
0
0
23
PEAK
CURRENT
A
80
40
40
30
CURRENT
WAVE
FORM
µs
0.6/18
0.2/310
5/310
10/1000
Figures 4. and 5. show how the TISP6151xx limits negative and positive over-voltages. Negative overvoltages
(Figure 4.) are initially clipped close to the SLIC negative supply rail value (VBAT). If sufficient current is
available from the overvoltage, then the protector (Th5) will crowbar into a low voltage on-state condition. As
the overvoltage subsides the high holding current of the crowbar prevents dc latchup. The protection voltage
will be the sum of the gate supply (VBAT) and the peak gate-cathode voltage (VGK(BO)). The protection voltage
will be increased if there is a long connection between the gate decoupling capacitor, C, and the gate
terminal. During the initial rise of a fast impulse, the gate current (IG) is the same as the cathode current (IK).
Rates of 70 A/µs can cause inductive voltages of 0.7 V in 2.5 cm of printed wiring track. To minimise this
inductive voltage increase of protection voltage, the length of the capacitor to gate terminal tracking should be
minimised. Inductive voltages in the protector cathode wiring can increase the protection voltage. These
voltages can be minimised by routing the SLIC connection through the protector as shown in Figure 3.
SLIC
PROTECTOR
SLIC
SLIC
PROTECTOR
SLIC
IK
Th5
TISP
IG
6151xx
C
220 nF
VBAT
AI6XAB
Figure 4. NEGATIVE OVERVOLTAGE CONDITION
IF
Th5
TISP
6151xx
VBAT
220 nF
AI6XAC
Figure 5. POSITIVE OVERVOLTAGE CONDITION
Positive overvoltages (Figure 5.) are clipped to ground by forward conduction of the diode section in protector
(Th5). Fast rising impulses will cause short term overshoots in forward voltage (VFRM).
The thyristor protection voltage, (V(BO)) increases under lightning surge conditions due to thyristor
regeneration time. This increase is dependent on the rate of current rise, di/dt, when the TISP is clamping the
voltage in its breakdown region. The diode protection voltage, known as the forward recovery voltage, (VFRM )
is dependent on the rate of current rise, di/dt. An estimate of the circuit di/dt can be made from the surge
PRODUCT INFORMATION
7
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