TISP61511DR 查看數據表（PDF） - Bourns, Inc

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TISP61511DR

DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS

Bourns, Inc 

TISP61511D Gated Protectors

Electrical Characteristics, TJ = 25 °C (Unless Otherwise Noted) (Continued)

Parameter

Test Conditions

IH Holding current

IT = 1 A, di/dt = -1A /ms, VGG = -48 V

IGAS Gate reverse current VGG = -75 V, K and A terminals connected

IGT Gate trigger current

VGT Gate trigger voltage

Anode-cathode off-

CAK state capacitance

IT = 3 A, tp(g) ≥ 20 µs, VGG = -48 V

IT = 3 A, tp(g) ≥ 20 µs, VGG = -48 V

f = 1 MHz, Vd = 1 V, IG = 0, (see Note 4)

Min

150

TJ = 25°C

TJ = 70°C

0.2

VD = -3 V

VD = -48 V

Typ Max

5

50

5

2.5

100

50

Unit

mA

µA

µA

mA

V

pF

pF

NOTE 4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured

device terminals are a.c. connected to the guard terminal of the bridge.

Thermal Characteristics

Parameter

RθJA

Junctio n to free air thermal resistance

Test Conditions

Min Typ Max Unit

Ptot = 0.8 W, TA = 25°C

5 cm2, FR4 PCB

D Package

170 °C/W

JULY 1995 — REVISED MARCH 2006

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

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